IMPROVING THE ELECTRON SPIN PROPERTIES OF NITROGEN-VACANCY CENTRES IN NANODIAMONDS BY NEAR-FIELD ETCHING

Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching

Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching

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Abstract The nitrogen-vacancy (NV) centre in diamond is a promising candidate iphone 14 price winnipeg for quantum computing applications and magnetic sensing applications, because it is an atomic-scale defect with stable coherence time (T 2) and reliable accessibility at room temperature.We demonstrated a method for improving the NV spin properties (the full width half maximum (FWHM) value of the magnetic resonance spectrum and T 2) through a near-field (NF) etching method under ambient conditions.The NF etching method, based on a He-Cd ultraviolet laser (325 nm), which is longer than the absorption edge of the oxygen molecule, enabled selective removal of defects on the nanodiamond surface.We observed a decrease in the FWHM value close to 15% and an increase in T 2 close to 25%.

Since our technique can be easily reproduced, a wide range ic berlin eyewear st. louis of NV centre applications could be improved, especially magnetic sensing applications.Our results are especially attractive, because they have been obtained under ambient conditions and only require a light source with wavelength slightly above the O2 absorption edge.

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